The storage performance is the key to system performance. This is why people are looking forward to using a higher performance storage, such as SSD than ever before. The-AIO has distinctive hardware technologies to improve storage performance. Details are listed below: 
NFC (NAND Flash Controller)
Today’s NAND Flash trend is to increase interface bandwidth. Also, in order to provide advanced performance, it has device specific interface, and its own added commands. Our NFC is designed with two major improvements to maximize the characteristics of NAND Flash. First, we maximized system-level performance by optimizing the link between the system hardware components and other software. Second, our NFC is designed to support various  NAND Flash. Our NFC supports all NAND Flash vendors. 
DFC (Data Flow Controller)
The-AIO's DFC has been designed for efficient FTL functions and data flow management. DFC is located between host interface and the NAND Flash controller, and improves the system with effective buffering, queuing, status checking, DMA functions, and so on.
BCH Codes
The BCH encoder/decoder provides ECC capabilities for applications such as data storage and transmission. BCH is an algorithm to detect and correct errors where errors are non-correlated (non-burst) just like NAND Flash errors. Our BCH IP encodes data into a 16383-bit code-word (2^14 Galois Field), enabling up to 1024 data bytes per correction block with up to 70 bits of ECC. Block size and ECC level can be dynamically changed for each correction operation, allowing flexibility of the controller. This engine in 8/16-bit parallel operation enables us to use high speed flash devices. The-AIO developed our own BCH algorithm which leads to world class performance & small chip size.
LDPC (Low-Density Parity-check Codes) 
As NAND Flash production process technology continues to scale down, NAND Flash memory reliability characteristics are dramatically decreasing. ECC(Error Correction Code algorithm) is necessary to ensure the stored data. Advanced ECCs such as LDPC codes can provide significantly stronger ECC capability over BCH codes being used in current products. This LDPC codes create two critical issues. First, accurate calculation of LLR demands fine-grained memory-cell sensing, which nevertheless tends to incur implementation overhead and access latency penalty. Hence, it is critical to minimize the fine-grained memory sensing precision. Second, accurate calculation of LLR also demands the availability of a memory-cell threshold-voltage distribution model. As the major source for memory-cell threshold-voltage distribution distortion, cell-to-cell interference must be carefully incorporated into the model. Our company is developing the base technologies of LDPC based on a variety of test results using NAND Flash.
RFE (Robust Flash Engine) 
NAND Flash production process technology is shrinking (20nm -> 1xnm) to improve cost competitiveness. However, reliability characteristics, such as endurance and retention performance, are decreasing. To compensate the reliability characteristics, we developed RFE (Robust Flash Engine), which consists of temperature compensation, coupling compensation, read level changes, etc.